An inverse boundary value problem from semiconductor modeling [electronic resource] /
In this thesis, we investigate an inverse boundary value problem arising from the study
of semiconductor transistors. The problem is to recover a number of parameters in the
coefficient function from the knowledge of the solution at some accessible boundary. We
first review the mathematical models that describe the current flow in a transistor into an
integrated circuit. We then obtain the theoretical results pertaining to this inverse problem,
such as existence, monotonicity, differentiability, asymptotic properties and identifiability.
We also formulate the partial differential equation model into a boundary integral equation
model. For the differential equation model, we employ both the finite difference method
and finite element method to compute the numerical results. For the integral equation
model, we obtain the numerical results by adopting a wavelet collocation method. Several
iteration schemes are designed and implemented for parameter identification for both models.
Examples are presented to illustrate the numerical results. Finally, some suggestions for
future research in this topic are given.
This work was partially supported by US Army Research Office Grant DAAG 55-98-1-
School:West Virginia University
School Location:USA - West Virginia
Source Type:Master's Thesis
Keywords:semiconductors boundary element methods
Date of Publication: