Use Linear Combination of Atomic Orbital Models to Study Wurtzite Semiconductor Band Structure
A simple theoretical method for calculating electronic band structure of wurtzite materials based on the linear combination of orbital model is presented. To abtain better description of the conduction band structures, second-nearest-neighbor s and p state interaction are included. We suggest that the zinc-blende InN has a direct band gap of ~2 eV and an indirect band gap of ~0.7 eV located at L-points. Due to band folding effect, the wurtzite InN thus has a direct band gap of ~0.7 eV located at £F3-point.
Advisor:Chun-nan Chen; Meng-en Lee; Ikai Lo; Jih-chen Chiang
School:National Sun Yat-Sen University
School Location:China - Taiwan
Source Type:Master's Thesis
Keywords:linear combination of atomic orbital model wurtzite structure
Date of Publication:01/24/2006