Temperature Effect on Microstructure and Characteristics of Nickel Thin Film Deposited on silicon

by Chao, I-kuei

Abstract (Summary)
The microstructure and residual stress of Ni thin film coating on Si influence the properties significantly, which play an important role in advanced applications of the electric and magnetic properties. The properties of Ni thin film deposited on Si at various temperatures and for different thickness have been studied in this work. Samples were characterized by nanoindentation, Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM), electrical measurement, grazing angle X-ray diffraction (XRD) and photo reflection spectroscopy of white light. The nanoindentation measurements reveal similar loading curves and young¡¦s modulus for Ni thin films on Si at different deposition temperatures. However, the higher the deposition temperature, the lower is the hardness of the Ni thin film on Si. A maximum stress occurs at deposition temperature of 88-122 ¢XC. From FTIR spectra an unusual IR oscillating absorption of the Ni/Si film was observed from the samples which was deposited at 230 ¢XC for 15 min (23 nm) and for 30 min (52 nm) compared to other deposition duration and deposition temperatures at room temperature, 88 ¢XC, and 122 ¢XC. Furthermore, annealing experiments of the samples were performed after deposited at room temperature, and then annealed at respective temperatures of 88, 122, 230 ¢XC for the durations of 15 min and 30 min for comparison. However, the unmoral IR oscillation doesn¡¦t occur else where. The phase change of Ni/Si was analyzed by grazing angle XRD. A single phase of NiSi (103) structure was observed only in the samples deposited at 230 ¢XC. Further study of the oscillation in the FTIR spectra shows its origin should be related to surface plasmon resonance (SPR) mode. The SPR absorption peaks at 471 nm and 616 nm are analyzed by a photo reflection experiment. The SPR absorption is due to the nano structure of nickel silicide on Ni/Si surface formed during deposition at 230 ¢XC.
Bibliographical Information:

Advisor:Cheng-tang Pan; Che-Hsin Lin; Tai-Fa Young

School:National Sun Yat-Sen University

School Location:China - Taiwan

Source Type:Master's Thesis

Keywords:spr nanoindentation ftir silicide microstructure stress


Date of Publication:12/05/2007

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