A Study of Modulation Doped Semiconductor Optical Amplifier and Ring Laser
In this thesis, we use InP based multiple quantum well epi-wafer with modulation doping in the active layer to design the semiconductor optical amplifier and ring laser for the optical communication at 1.55£gm wavelength. We also finish the mask design and fabrication of theses two devices. Besides, we have established an optical measurement system, including the L-I measurement, the optical spectrum measurement and the far field measurement, to test the device parameters.
In the device process, we use the new method, called the Multi-Step Undercutting, to precisely control the undercut in the wet etching process. With this technique, we can get a smooth and vertical sidewall for our devices.
For the semiconductor optical amplifier, we design two different types, one is the Fabry-Perot Amplifier and the other is the Traveling Wave Amplifier. We use the Multi-Step Undercutting process in the fabrication of these two devices. The main parameters for semiconductor optical amplifier are the change of the output power versus the input current, the spontaneous emission spectrum and the photocurrent spectrum.
For the ring laser, we combine the concept of Loop Mirror and Asymmetric Mach-Zehnder Interferometer to obtain the laser with good side mode suppression for a single wavelength light source.
Advisor:Ching-Ting Lee; Tsong-Sheng Lay; Tao-Yuan Chang; San-Liang Lee; Kao-Jui Lin
School:National Sun Yat-Sen University
School Location:China - Taiwan
Source Type:Master's Thesis
Keywords:ring cavity resonator semiconductor optical amplifier
Date of Publication:07/22/2005