Study on the Electronic Properties of In0.22Ga0.78As/GaAs Single Quantum Wells

by Lian, Jau-Rung

Abstract (Summary)
We haved studied the magneto-transport properties of two dimensional electron gas (2DEG) in Si £_-doped In0.22Ga0.78As/AlGaAs single quantum wells ( QWs ) by using Shubnikov-de Haas ( SdH ) measurements . From the SdH measurement , we can clearly observe the SdH oscillations and obtain the SdH frequencies. It indicates the 2DEG in these QWs was confirmed . We also obtain the deep level binding energies¡G 104.4 meV and 9.6 meV for sample 1 and 50.2meV for sample2 by T-dependent Van der Pauw Hall effect measure- ment at magnetic field 0.3T. The difference of these two samples was the In0.1Ga0.9As layer of sample 2 was inserted between In0.22Ga0.78As well and the GaAs spacers . So in this paper , we tried to propose a model to interpret the deep-level traps in the QWs and studied the effect of In0.1Ga0.9As inserted-layer on the In0.22Ga0.78As/GaAs Single Quantum Wells.
Bibliographical Information:

Advisor:Yan-ten Lu; Ikai Lo; Li-wei Tu

School:National Sun Yat-Sen University

School Location:China - Taiwan

Source Type:Master's Thesis

Keywords:hall sdh inserted layer quantum wells gaas 2deg


Date of Publication:06/29/2004

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