Strukturierung und elektrische Eigenschaften von Gasphasen-generierten PbS Nanokristall-Filmen / Structuring and electronic properties of gasphase-generated PbS nanocrystal films
Nanocrystal films may be used as detector material in sensors, as charge storage or conducting channels in devices. In this work lead sulphide (PbS) nanocrystals are generated in the gas-phase and deposited onto substrates forming nanocrystal films. A technology is developed for lateral structuring of these films on the substrate and to process them further by microelectronic standard processes. The pattern of the nanocrystal film is scaled down by several hundreds of nanometers compared to the used photoresist mask pattern. The responsible mechanism is found by consideration of physical mechanisms and usage of a trajectory simulation program. For basic electrical investigation a system is designed for production of nanocrystal films and electrical characterization under clean conditions. Noise measurements and I-V characterizations are performed. Both, single charge transport and charge transport through the interface of nanocrystal film and substrate have been found. The volume of the nanocrystal film is for the current transport not important. PbS nanocrystal films can be used in future devices for definition of high resolution current paths. Current designs can be used to downscale the device patterns without applying high resolution lithography. The parallel process technology with optical lithography still can be used to implement the films into microelectronic devices. With the trajectory simulation program the geometry can be predicted. The developed technology and the results can be transmitted to other material systems.
Advisor:PD Dr.-Ing. Frank Einar Kruis; Prof. Dr. rer.nat. Franz-Josef Tegude; Prof. Dr. rer. nat. Gerd Bacher; Prof. Bedrich J. Hosticka; Prof. Dr.-Ing. Axel Hunger
School:Universität Duisburg-Essen, Standort Essen
Source Type:Master's Thesis
Keywords:elektrotechnik universitaet duisburg essen
Date of Publication:10/07/2005