Rigorose Modellbeschreibung für InP basierte Heterostruktur-Bipolartransistoren / Rigorous model description for InP-based heterojunction bipolartransistors

by Ehrich, Silja

Abstract (Summary)
For circuit simulation and device optimisation it is necessary to have one consistent model which describes not only the DC-behaviour of the device correcty but also the the small-signal and noise behaviour. This work presents a rigorous modell-description of an InP based heterojunction bipolartransitor taking into account material specific effects for all bias conditions.
Bibliographical Information:

Advisor:Prof. Dr. rer. nat. F.-J. Tegude; Prof. Dr. -Ing. G. Böck

School:Universität Duisburg-Essen, Standort Essen

School Location:Germany

Source Type:Master's Thesis

Keywords:elektrotechnik universitaet duisburg essen


Date of Publication:04/05/2006

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