Radiative modeling in rapid thermal processing for accurate wafer temperature measurement [electronic resource]

by Zhou, Yihui.

Abstract (Summary)
ABSTRACT: Advances in semiconductor technology have led to the development of rapid thermal processing (RTP), a technique that will play a vital role in the manufacturing of integrated circuits. Accurate in situ temperature measurement and control are crucial for RTP furnaces to be largely accepted in the fabrication of semiconductor chips. This work describes two effective emissivity models based on the net-radiation method and the Monte Carlo method to simulate the radiative process inside the lower chamber of some RTP furnaces. A highly reflective shield has been placed underneath the wafer to increase its effective emissivity. With a guard ring and a guard tube, the lower chamber can be modeled as a cylindrical enclosure. The surfaces in the enclosure are diffusely emitting but the reflection may include a diffuse component and a specular component. The net-radiation method has the advantages of convenient programming and quick computation. A parametric study was performed using this model. The Monte Carlo method has the ability to incorporate surface roughness by the bi-directional reflectance distribution function (BRDF) and to consider the characteristics of the lightpipe radiation thermometer (LPRT). The simulation process by the forward Monte Carlo method needs a huge number of random numbers. The small lightpipe diameter and small half angle of optical fiber make the computation by the forward method very
Bibliographical Information:


School:University of Florida

School Location:USA - Florida

Source Type:Master's Thesis



Date of Publication:

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