Physical Understanding of Strained-Silicon and Silicon-Germanium FETs for RF and Mixed-Signal Applications

by Madan, Anuj

Abstract (Summary)
The objective of proposed research is to investigate the potential of strained silicon and silicon-germanium (SiGe) based devices for RF/mixed-signal applications. Different device topologies, namely strained buried channel modulation doped field effect transistor (MODFET) and silicon-on-insulator (SOI) based MOSFETs, are studied in this context. Our preliminary results on SiGe MODFETs indicate strong dependence of device performance on displacement damage, which is critical for extreme environment applications. This research will be an effort towards understanding the physics of these devices in extreme environment conditions.
Bibliographical Information:

Advisor:Shyh-Chiang Shen; John Papapolymerou; John D. Cressler

School:Georgia Institute of Technology

School Location:USA - Georgia

Source Type:Master's Thesis

Keywords:electrical and computer engineering


Date of Publication:05/28/2008

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