Photoluminescence on Si-Doped PAMBE Grown InN
In this thesis, we study a series of Si doped InN films. These samples are grown on sapphire (0001) by molecular beam epitaxy (MBE). We have doped Si in InN films successfully. In this experiment, we control Si cell temperature to change carrier concentration of samples during InN film growth. The carrier concentration and mobility are explored by van der Pauw Hall measurement. As carrier concentration increases, mobility decreases. Carrier concentration changes with Si cell temperature from 6.16x1018 cm-3 to 1.19x1020 cm-3. Photoluminescence (PL) emission peak energy shows blue shift when carrier concentration increases, but the intensity decreases and full width at half maximum (FWHM) broadens. The PL peak of InN film with 1.19x1020 cm-3 split into two peaks 0.74 eV and 0.89 eV. In Raman spectra, Raman modes position and FWHM do not change with carrier concentration. In temperature dependence PL, the dependence of PL spectra shows decrease when carrier concentration increases. In power dependence PL, the PL emission peak energy of InN films with 6.16x1018 cm-3 and 8.50x1018 cm-3 show blue shift, while the PL peaks of InN films with 1.43x1019 cm-3 and 2.27x1019 cm-3 show no significant move. The fitting of power density vs. intensity is linear for all samples, but all slope of them are less than 1 expect for InN film with 1.43x1019 cm-3.
Advisor:D. R. Hang; Li-Wei Tu; Der-Jun Jang
School:National Sun Yat-Sen University
School Location:China - Taiwan
Source Type:Master's Thesis
Keywords:sapphire molecular beam epitaxy raman inn hall photoluminescence si doped mbe
Date of Publication:08/22/2005