Photoluminescence of InN grown by PAMBE

by Chou, Wei-chun

Unintentionally doped InN thin films have been epitaxially grown on Si (111) by plasma-assisted molecular-beam epitaxy (PAMBE) with AlN buffer layers. The optical characteristics were investigated with photoluminescence (PL). In analyzing the PL spectra, we look into the variations in peak positions, intensities, and full¡Ðwidth ¡Ðat¡Ðhalf maximum (FWHM) by changing the temperature and the laser power. To cover both the visible and IR spectral ranges, two different detectors were used, PMT for the visible and PbS for the near-IR. A single namely, dominant peak was found in the near-IR regime. The temperature dependent PL line-shape is fitted with the Varshni equation. Excitation laser power dependent PL is found to follow a linear relation. The energy band gap of InN is inferred from the optical measurements.