Metal Deposition on Silicon from Fluoride Solution.

by Gorostiza Langa, Pablo Ignacio

Abstract (Summary)
Metallic deposits can be produced on the surface of silicon crystals by immersion in aqueous solutions containing fluoride and the metallic ions. This work aims to elucidate the general mechanism of the deposition process, based on "in situ" electrochemical measurements under potentiostatic control and "ex situ" microscopic and spectroscopic techniques. The mechanism developed takes into account the classical concepts of semiconductor electrochemistry, as well as the recent advances in the understanding of silicon chemistry. The consequences of this study and its technological applications are also discussed.
Bibliographical Information:

Advisor:Morante i Lleonart, Joan Ramon; Sanz i Carrasco, Fausto

School:Universitat de Barcelona

School Location:Spain

Source Type:Master's Thesis



Date of Publication:02/18/2000

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