Investigation of optoelectronic properties of thin film n-type ZnS on p-type Si
Abstract (Summary)This project investigated optoelectronic properties of thin film n-type ZnS on p-type Si substrate, which have been fabricated using pulsed-laser deposition (PLD) technique. The photocurrent (PC) response of the above heterostructure was measured using the lock-in technique. The experimental PC response spectrum was compared with the theoretical spectrum using density of states (DOS), modified Urbach rule,and the surface recombination of a thin film. In addition, current-voltage (I/V) characteristics was employed to determine the electronic features of the thin-film sample.
School Location:USA - Ohio
Source Type:Master's Thesis
Keywords:photocurrent of zns thin films ac measurements
Date of Publication:01/01/2008