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GROWTH AND CHARACTERIZATION OF ELECTRONIC AND OPTICAL PROPERTIES OF WIDE BAND GAP AMORPHOUS NITRIDE ALLOYS

by Little, Mark Edward

Abstract (Summary)
Nitride semiconductors have garnered great attention in recent years due their usefulness in high temperature, high power, and short wavelength electronic devices. One disadvantage of these materials, however, is their high growth temperature. This restricts their application to substrates capable of withstanding the necessary high growth temperatures. Amorphous phases of these materials may alleviate this problem since they may be grown at room temperature. For this work, thin film alloys of amorphous ScxGa1-xN and amorphous GaxSi1-xNy were prepared by reactive co-sputtering. Optical absorption measurements were conducted to measure the optical band gap. ScxGa1-xN was found to have a band gap linearly dependent on alloy composition. GaxSi1-xNy also showed a linear relation of band gap and concentration in the range studied. Additionally, GaxSi1-xNy alloys showed electrical conductivity. The conductivity was found to be dependent on annealing temperature and inversely proportional to alloy concentration. Temperature dependent conductivity measurements reveal that conduction is most probably due to Mott variable range hopping between band tail states.
Bibliographical Information:

Advisor:

School:Ohio University

School Location:USA - Ohio

Source Type:Master's Thesis

Keywords:amorphous nitrides hopping conduction

ISBN:

Date of Publication:01/01/2001

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