Fabrication and Measurement of Semiconductor Optical Amplifiers and Ring Lasers
In this thesis, we focus on the investigation of semiconductor optical amplifier and ring laser. We use InP based multiple quantum well epi-wafer with modulation doping in the active layer to design the semiconductor optical amplifier and ring laser for the optical communication at 1.55£gm wavelength. We combine the concept of Loop Mirror and Asymmetric Mach-Zehnder Interferometer to obtain the laser with good side mode suppression for a single wavelength light source. For the semiconductor optical amplifier, we design two different types, one is the Fabry-Perot Amplifier and the other is the Traveling Wave Amplifier. Furthermore, We use the Multi-Step Undercutting process in the fabrication of these two devices.
We have established an optical measurement system, including the L-I measurement, the optical spectrum measurement and the far field measurement, to test the device parameters.
After annealing, these devices with two different serial number exhibited the contact resistances of 9£[ and 16£[, respectively. Under CW operation, these FPA exhibited the threshold current of 62mA and 70mA at 20¢J, respectively. The stimulated emission wavelength was at 1531nm and 1522nm, respectively.
Advisor:wen-Jeng Ho; Wood-Hi Cheng; Tsong-Sheng Lay; Tao-Yuan Chang; Tzong-Yow Tsai
School:National Sun Yat-Sen University
School Location:China - Taiwan
Source Type:Master's Thesis
Keywords:ring cavity resonator semiconductor optical amplifier
Date of Publication:07/10/2006