Fabrication and Measurement of Semiconductor Optical Amplifiers and Ring Lasers

by Chen, Jheng-de

Abstract (Summary)
In this thesis, we focus on the investigation of semiconductor optical amplifier and ring laser. We use InP based multiple quantum well epi-wafer with modulation doping in the active layer to design the semiconductor optical amplifier and ring laser for the optical communication at 1.55£gm wavelength. We combine the concept of Loop Mirror and Asymmetric Mach-Zehnder Interferometer to obtain the laser with good side mode suppression for a single wavelength light source. For the semiconductor optical amplifier, we design two different types, one is the Fabry-Perot Amplifier and the other is the Traveling Wave Amplifier. Furthermore, We use the Multi-Step Undercutting process in the fabrication of these two devices. We have established an optical measurement system, including the L-I measurement, the optical spectrum measurement and the far field measurement, to test the device parameters. After annealing, these devices with two different serial number exhibited the contact resistances of 9£[ and 16£[, respectively. Under CW operation, these FPA exhibited the threshold current of 62mA and 70mA at 20¢J, respectively. The stimulated emission wavelength was at 1531nm and 1522nm, respectively.
Bibliographical Information:

Advisor:wen-Jeng Ho; Wood-Hi Cheng; Tsong-Sheng Lay; Tao-Yuan Chang; Tzong-Yow Tsai

School:National Sun Yat-Sen University

School Location:China - Taiwan

Source Type:Master's Thesis

Keywords:ring cavity resonator semiconductor optical amplifier


Date of Publication:07/10/2006

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