Evanescent Microwave Characterization of carbon Nanotube Films Grown on Silicon Carbide Substrate

by Munbodh, Kineshma

The electromagnetic characterization of carbon nanotube films (CNT) grown by the surface decomposition of silicon carbide (SiC) has been performed. The CNT films formed on the carbon and silicon terminated face of the SiC substrate were uncapped by an annealing process at a temperature of 4000 C with dwelling time up to 60 minutes in oxygen or carbon dioxide atmosphere. X-Y scans of the quality factor were used to deduce the local conductive properties of the films measured by evanescent microwave microscopy. Real and imaginary permittivity values, as determined by these electromagnetic measurements, provided valuable information for future field emission testing on these films. A theoretical model, adapted from the literature, was used to find the real and imaginary component of the permittivity of the CNT films. The results showed improvement in the surface conductivity of the samples after the annealing treatment.