Electronic Transport Properties of Stabilized Amorphous Selenium X-ray Photoconductors
TOF and IFTOF measurements were carried out on a number of samples of vacuum deposited selenium alloy x-ray photoconductors. Device quality photoconductor films are fabricated by evaporating a-Se source material that has been alloyed with a small quantitiy of As (~0.3 at. %) and doped with a halogen (typically Cl) in the p.p.m. range. The dependence of the carrier range on the composition of the photoreceptor film was accurately measured using both TOF and IFTOF measurements. It was found that the transport properties of the film could be controlled by suitably adjusting the composition of the alloy. Combined IFTOF and TOF measurements were also performed on several samples to examine the effects of trapped electrons on the hole transport properties in a-Se films. It was found that drifting holes recombine with the trapped electrons, and that this process could be described by a Langevin recombination process. This finding is important for the correct modeling of amorphous selenium digital x-ray detector designs. Finally, the effects of x-ray exposure on a-Se films were examined. A temporary reduction in the effective hole lifetime was observed due to an increase in the number of hole capture centers following an x-ray exposure. The capture coefficient between free holes and the x-ray induced hole capture centers was measured using combined TOF and IFTOF measurements. It was shown that this capture process was governed by the Langevin recombination mechanism. From these observations it was concluded that trapped electrons from a previous x-ray exposure act as recombination centers for subsequently generated holes, thereby reducing the effective hole lifetime in the sample.
Advisor:O'Leary, Stephen K.; Llewellyn, Edward J.; Kasap, Safa O.; Karki, Rajesh; Johanson, Robert E.; Bolton, Ronald J.
School:University of Saskatchewan
School Location:Canada - Saskatchewan
Source Type:Master's Thesis
Keywords:charge transport x ray photoconductors selenium amorphous semiconductors
Date of Publication:03/17/2005