Electronic Properties of Silicon-based Nanostructures

by Guzman-Verri, Gian Giacomo

We have developed a new unifying tight-binding theory that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp²s* and sp³ models up to first- and second-nearest neighbors, respectively. Our results show that the corresponding Si nanotubes follow the so-called Hamada's rule. Comparison to a recent ab initio calculation is made.