The Design and Fabrication of Ring Cavity Semiconductor Laser
This paper presents design and fabrication of ring cavity semiconductor lasers with simple fabrication processes and good potential for integration. A 1.55-£gm symmetric quantum well InGaAsP epi-layer wafer is used to fabricate the lasers. The fabrication processes involve a bi-level deep etching to reduce the bending losses.
Two geometric types of ring cavity semiconductor lasers have been investigated. For the type 1 ring cavity in the form of race tracks, two different designs are presented. One has a single ring resonator (SRR) design and the other has a coupled double ring resonators (DRR) design. The resonator of the type 2 ring cavity is formed between a cleaved facet and a loop mirror. Both a single ring resonator (SRR) design and a double ring resonator (DRR) design are presented for this type of cavity also.
The maximum saturation output light powers of 0.479 and 0.409 mW are observed in room temperature L-I measurements for type 1 and type 2 ring cavity semiconductor lasers respectively.
The spontaneous emission spectra of the type 1 ring cavity semiconductor lasers show a red-shift phenomenon under increasing drive currents. The type 1 ring cavity semiconductor lasers with ring resonators of 100 and 200 £gm radii have also been found to exhibit an interesting wavelength clamping phenomenon of the output light.
Advisor:Tao-Yuan Chang; Yi-Jen Chiu; Wen-Jeng Ho; Ching-Ting Lee; Tsong-Sheng Lay
School:National Sun Yat-Sen University
School Location:China - Taiwan
Source Type:Master's Thesis
Keywords:ring cavity resonator semiconductor laser
Date of Publication:06/24/2003