Crecimiento y caracterización de capas epitaxiales de KRE 1-X 4BX(WO4)2 /KRE (WO4)2 (RE=Y,LU) para aplicaciones láser

by Aznar Écija, Ana Isabel

Abstract (Summary)
Abstract In the past few years, optically active thin layers have attracted much attention due to the possibility of using it in the integrated optics as well as thin disk laser technology. The thin disk laser concept need layers hundreds of microns thick highly doped with active ions and high absorption and emission cross section. The lasers based on thin films have the advantage of high beam quality with high efficiency, making possible to obtain high power with low thermal lensing. The crystals of the monoclinic tungstates, such as KRE(WO4)2 with RE=Y, Lu, are attractive materials to be used as solid state host doped with lanthanide ions as ytterbium due to the possibility of obtaining highly doped active media. The aim of this thesis is to investigate how to obtain thin layers of Yb:KYW/KYW and Yb:KLuW/KLuW, with quality enough for laser experiments. The growth process has been optimized in order to obtain crystalline layers with high ytterbium concentration. Structural and spectroscopic properties of these layers have been studied, suggesting that laser emission can be achieved. The last part of thesis is dedicated to study the laser experiments. We have achieved laser emission around 1030 nm with high slope efficiency, which in some cases exceeded the reported for the ytterbium doped bulk crystals Keywords: Top Seeded Solution Growth, Liquid Phase Epitaxy, KRE(WO4)2, Laser materials
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Document Full Text
The full text for this document is available in Spanish.
Bibliographical Information:

Advisor:Aguiló Díaz; Magdalena; Solé Cartaña; Rosa Maria

School:Universitat Rovira i Virgili

School Location:Spain

Source Type:Master's Thesis

Keywords:departament de química física i inorgànica


Date of Publication:12/20/2007

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