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Capacitance-Voltage Study of InN MOS Structure with Different Oxide Thickness

by Tsai, Chia-hsiu

Abstract (Summary)
InN films were grown on Si(111) wafer with AlN buffer layer by plasma-assisted molecular beam epitaxy (PAMBE). The sample went through a conventional cleaning process which involved sequential rinsing in acetone (5 mins), isopropyl alcohol (5 mins), de-ionized water (5 mins), and blown dry with nitrogen before SiO2 deposited. We used E-beam to deposit SiO2 thin film on InN. Ohmic contact (Ti) was prepared by e-beam evaporation. The system used to measure the high-frequency and low-frequency consists of Keithley 590 analyzer and Quasistatic CV meter. At last we added the capacitance-voltage study of the Si MOS structure and the research of growing high quality AlN for high quality InN.
Bibliographical Information:

Advisor:T. C. Yen; Q. Y. Chen; L. W. Tu; M. H. Tsai

School:National Sun Yat-Sen University

School Location:China - Taiwan

Source Type:Master's Thesis

Keywords:inn c v

ISBN:

Date of Publication:07/18/2007

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