Capacitance-Voltage Study of InN MOS Structure with Different Oxide Thickness

by Tsai, Chia-hsiu

InN films were grown on Si(111) wafer with AlN buffer layer by plasma-assisted molecular beam epitaxy (PAMBE). The sample went through a conventional cleaning process which involved sequential rinsing in acetone (5 mins), isopropyl alcohol (5 mins), de-ionized water (5 mins), and blown dry with nitrogen before SiO2 deposited. We used E-beam to deposit SiO2 thin film on InN. Ohmic contact (Ti) was prepared by e-beam evaporation. The system used to measure the high-frequency and low-frequency consists of Keithley 590 analyzer and Quasistatic CV meter. At last we added the capacitance-voltage study of the Si MOS structure and the research of growing high quality AlN for high quality InN.